b-22 01/99 2n5484, 2n5485, 2n5486 n-channel silicon junction field-effect transistor vhf/uhf amplifiers absolute maximum ratings at t a = 25?c reverse gate source voltage C 25 v reverse gate drain voltage C 25 v continuous device power dissipation 360 mw power derating 3.27 mw/c toe226aa package dimensions in inches (mm) pin configuration 1 drain, 2 source, 3 gate surface mount smp5484, SMP5485, smp5486 at 25c free air temperature: 2n5484 2n5485 2n5486 process nj26 static electrical characteristics min max min max min max unit test conditions gate source breakdown voltage v (br)gss C 25 C 25 C 25 v i g = 1a, v ds = ? v gate reverse current i gss C 1C 1C 1nav gs = C 20 v, v ds = ? v C 0.2 C 0.2 C 0.2 a v gs = C 20 v, v ds = ? v t a = 100c gate source cutoff voltage v gs(off) C 0.3 C 3 C 0.5 C 4 C 2 C 6 v v ds = 15 v, i d = 10 na drain saturation current (pulsed) i dss 15410820mav ds = 15 v, v gs = ? v dynamic electrical characteristics forward transconductance r e(yfs) 2500 s v ds = 15 v, v gs = ? v f = 100 mhz 3000 3500 s v ds = 15 v, v gs = ? v f = 400 mhz common source forward transadmittance y fs 3000 6000 3500 7000 4000 8000 s v ds = 15 v, v gs = ? v f = 1 khz input admittance r e(yis) 100 s v ds = 15 v, v gs = ? v f = 100 mhz 1000 1000 s v ds = 15 v, v gs = ? v f = 400 mhz output conductance r e(yos) 75 s v ds = 15 v, v gs = ? v f = 100 mhz 100 100 s v ds = 15 v, v gs = ? v f = 400 mhz common source output admittance y os 50 60 75 s v ds = 15 v, v gs = ?v f = 1 mhz common source input capacitance c iss 555pfv ds = 15 v, v gs = ?v f = 1 mhz common source reverse c rss 111pfv ds = 15 v, v gs = ?v f = 1 mhz transfer capacitance output capacitance c oss 222pfv ds = 15 v, v gs = ?v f = 1 mhz 1000 n. shiloh road, garland, tx 75042 (972) 487-1287 fax (972) 276-3375 www.interfet.com databook.fxp 1/13/99 2:09 pm page b-22
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